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BAT54T1G - onsemi

Description: S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; Low Forward Voltage 350 mV (Typ) @ IF = 10 mA; Extremely Fast Switching Speed; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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BAT54T1G - onsemi PCB footprint - Small Outline Diode - Small Outline Diode - SOD-123
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BAT54T1G Details

  • Manufacturer Part Number:

    BAT54T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-123 2 LEAD

  • Pin Count:

    2

  • Manufacturer Package Code:

    425-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.24 V

  • JESD-30 Code:

    R-PDSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    0.6 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.4 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    30 V

  • Reverse Recovery Time-Max:

    0.005 µs

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAT54T1G Frequently Asked Questions (FAQs)

  • The BAT54T1G can operate from -55°C to 150°C, making it suitable for a wide range of applications.
  • To ensure proper biasing, connect the BAT54T1G between the base and emitter of a transistor, and ensure the base-emitter voltage is within the recommended range (typically 0.6-0.8V).
  • The BAT54T1G has a maximum current rating of 100 mA, making it suitable for low-power applications.
  • Yes, the BAT54T1G is suitable for high-frequency applications up to 5 GHz, making it a good choice for RF and microwave designs.
  • To prevent ESD damage, handle the BAT54T1G with ESD-protective equipment, and ensure the device is properly grounded during handling and assembly.

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BAT54T1G Overview

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