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BAV70,LM - Toshiba

Description: Diodes - General Purpose, Power, Switching Switching Diode 100V .9pF .215A

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BAV70,LM - Toshiba PCB footprint - Other - Other - BAV70,LM-4
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BAV70,LM - Toshiba  - 3D model - Other - BAV70,LM-4
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BAV70,LM Details

  • Manufacturer Part Number:

    BAV70,LM

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.1075 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.32 W

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    0.2 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    80 V

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

BAV70,LM Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for BAV70,LM is -55°C to 150°C, although the datasheet only specifies a range of -40°C to 125°C for certain parameters.
  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink.
  • The maximum allowable power dissipation for BAV70,LM is dependent on the ambient temperature and the thermal resistance of the device. Typically, it's around 500 mW at 25°C, but this value decreases as the temperature increases.
  • While BAV70,LM is primarily designed for linear applications, it can be used in switching applications with caution. However, the device's switching characteristics, such as transition times and voltage ratings, may not be optimized for high-frequency switching.
  • To prevent electrostatic discharge (ESD) damage, it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials.

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