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BAV99HYFHT116 - ROHM Semiconductor

Description: High speed switching, 80V, 215mA, SOT-23, Series Connection, Automotive Switching Diode

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BAV99HYFHT116 - ROHM Semiconductor PCB footprint - Other - Other - (SOT-23 SSD3)
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BAV99HYFHT116 - ROHM Semiconductor  - 3D model - Other - (SOT-23 SSD3)
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BAV99HYFHT116 Details

  • Manufacturer Part Number:

    BAV99HYFHT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2020-06-15

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.1

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    4 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.215 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.25 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    80 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

BAV99HYFHT116 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the BAV99HYFHT116 is -40°C to 125°C.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal management system to keep the junction temperature below 125°C.
  • The maximum allowable power dissipation for the BAV99HYFHT116 is 250mW. Exceeding this limit can cause the device to overheat and fail.
  • To handle the ESD sensitivity of the BAV99HYFHT116, it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and to avoid touching the device pins or leads.
  • The recommended storage temperature range for the BAV99HYFHT116 is -40°C to 125°C. Storage outside of this range can affect the device's reliability and performance.

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BAV99HYFHT116 Overview

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