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BC847CHZGT116 - ROHM Semiconductor

Description: Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 200 mW Surface Mount SST3 , 150°C (TJ)

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BC847CHZGT116 - ROHM Semiconductor - PCB symbol
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PCB Footprints
BC847CHZGT116 - ROHM Semiconductor PCB footprint - Other - Other - SST3_2026
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3D Models
BC847CHZGT116 - ROHM Semiconductor - 3D model - Other - SST3_2026
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BC847CHZGT116 Details

  • Manufacturer Part Number:

    BC847CHZGT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    4 pF

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    420

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 7 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    300 MHz

  • VCEsat-Max:

    0.4 V

BC847CHZGT116 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BC847CHZGT116 is a standard SOT23 package with a 1.7mm x 1.3mm body size and 0.5mm lead pitch. The datasheet provides a recommended land pattern and soldering information.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating temperature range of -55°C to 150°C, and consider derating the device's power dissipation according to the thermal resistance and ambient temperature. Additionally, ensure good thermal design and heat sinking to minimize junction temperature.
  • The maximum allowed voltage for the BC847CHZGT116 is 50V for the collector-emitter voltage (Vce) and 50V for the emitter-base voltage (Veb). Exceeding these voltage limits can damage the device.
  • Choose the correct resistor values based on the desired operating point, current gain, and voltage drop. A general rule of thumb is to use a base resistor (Rb) that is 10-20 times the collector resistor (Rc) to ensure stable operation. Consult the datasheet and application notes for more detailed guidance.
  • The BC847CHZGT116 is a general-purpose transistor with a transition frequency (fT) of 100 MHz. While it can be used in some high-frequency applications, it may not be the best choice for very high-frequency applications (e.g., above 100 MHz). Consider using a transistor with a higher fT or a specialized RF transistor for high-frequency applications.

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BC847CHZGT116 Overview

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