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BC847SH6327XTSA1 - Infineon

Description: NPN Silicon AF Transistor Arrays

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PCB Footprints
BC847SH6327XTSA1 - Infineon PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363
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3D Models
BC847SH6327XTSA1 - Infineon  - 3D model - SOT23 (6-Pin) - SOT-363
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BC847SH6327XTSA1 Details

  • Manufacturer Part Number:

    BC847SH6327XTSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    NPN

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

BC847SH6327XTSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BC847SH6327XTSA1 is -55°C to 150°C.
  • To ensure reliability, follow the recommended derating guidelines for the transistor, and consider using thermal management techniques such as heat sinks or thermal interfaces.
  • The recommended storage temperature range for the BC847SH6327XTSA1 is -40°C to 100°C.
  • Yes, the BC847SH6327XTSA1 is designed to operate in humid environments, but it's essential to follow proper handling and storage procedures to prevent moisture-related issues.
  • To prevent ESD damage, handle the transistor with anti-static materials, use ESD-protected workstations, and follow proper grounding procedures.

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