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BC856BHE3-TP - MCC

Description: Halogen Free. "Green" Device (Note 1) • AEC-Q101 Qualified • For Switching and AF Amplifier Applications • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)

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PCB Footprints
BC856BHE3-TP - MCC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23s
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3D Models
BC856BHE3-TP - MCC  - 3D model - SOT23 (3-Pin) - SOT-23s
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BC856BHE3-TP Details

  • Manufacturer Part Number:

    BC856BHE3-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    65 V

  • DC Current Gain-Min (hFE):

    220

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    10

BC856BHE3-TP Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BC856BHE3-TP is a standard SOT-23 package with a 1.3mm x 0.8mm pad size, and a 0.5mm x 0.5mm thermal pad.
  • While the BC856BHE3-TP has a maximum operating temperature of 150°C, it's recommended to derate the power dissipation to ensure reliable operation above 125°C. Consult the datasheet for derating curves.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE) ranges. Additionally, consider using a resistor network to stabilize the bias voltage.
  • The BC856BHE3-TP has a transition frequency (fT) of 3 GHz, making it suitable for high-frequency applications up to several hundred MHz. However, for frequencies above 1 GHz, consider using a transistor with a higher fT or a specialized RF transistor.
  • While the BC856BHE3-TP can be used in switching applications, its switching characteristics are not optimized for high-speed switching. Consider using a transistor with a faster switching time (t_on and t_off) and a lower saturation voltage (VCE(sat)) for high-speed switching applications.

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