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BC856BLT1 - onsemi

Description: Obsolete - PNP Epitaxial Silicon Transistor

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BC856BLT1 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - BC856BLT1-00
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BC856BLT1 - onsemi  - 3D model - SOT23 (3-Pin) - BC856BLT1-00
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BC856BLT1 Details

  • Manufacturer Part Number:

    BC856BLT1

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    CASE 318-08, TO-236, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    65 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    220

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

BC856BLT1 Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the maximum ratings and thermal characteristics. A safe operating area can be assumed to be within the boundaries of Vce = 30V, Ic = 1A, and Pd = 500mW.
  • To ensure linear operation, the BC856BLT1 should be biased in the active region, typically between 1/3 to 2/3 of the supply voltage (Vcc). The base-emitter voltage (Vbe) should be around 0.65-0.7V, and the collector-emitter voltage (Vce) should be at least 1V to 2V above the saturation voltage (Vcesat).
  • A good PCB layout should ensure minimal thermal resistance and inductance. Use a thermal pad or heat sink to dissipate heat, and keep the transistor away from other heat sources. A copper pour or thermal vias can help to dissipate heat. Follow the recommended land pattern and keep the leads as short as possible.
  • Yes, the BC856BLT1 can be used as a switch, but it's essential to consider the switching frequency, rise and fall times, and the load characteristics. The transistor should be driven with a suitable base current to ensure fast switching, and the collector-emitter voltage should be sufficient to handle the load current.
  • To protect the BC856BLT1 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has adequate ESD protection, such as TVS diodes or ESD protection circuits. Avoid touching the device pins or exposing them to static-prone environments.

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BC856BLT1 Overview

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Part Image BC856BTA Diodes Incorporated

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Part Image BC856B-TAPE-13 NXP Semiconductors

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Part Image BC856B-7 Diodes Incorporated

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Part Image BC856BTRL13 NXP Semiconductors

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