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BC857CWT1G - onsemi

Description: Device Marking: BC856AWT1 = 3A BC856BWT1 = 3B BC857AWT1 = 3E BC857BWT1 = 3F BC858AWT1 = 3J BC858BWT1 = 3K BC858CWT1 = 3L; Pb-Free Packages are Available; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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PCB Footprints
BC857CWT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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BC857CWT1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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BC857CWT1G Details

  • Manufacturer Part Number:

    BC857CWT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    4.5 pF

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    420

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.65 V

BC857CWT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BC857CWT1G is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet, and consider using a voltage regulator or resistive divider network to stabilize the voltage supply.
  • The recommended storage temperature range for the BC857CWT1G is -55°C to 150°C, with a relative humidity of 60% or less.
  • Yes, the BC857CWT1G can be used in switching applications, but ensure the transistor is properly biased and the switching frequency is within the recommended range to avoid overheating or oscillation.
  • To prevent electrostatic discharge (ESD) damage, handle the BC857CWT1G with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected.

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BC857CWT1G Overview

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