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BC858BHZGT116 - ROHM Semiconductor

Description: PNP, SOT-23, -30V -100mA, General Purpose Transistor for Automotive

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BC858BHZGT116 - ROHM Semiconductor - PCB symbol
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PCB Footprints
BC858BHZGT116 - ROHM Semiconductor PCB footprint - Other - Other - SMT3(H=1.3mm)
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3D Models
BC858BHZGT116 - ROHM Semiconductor - 3D model - Other - SMT3(H=1.3mm)
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BC858BHZGT116 Details

  • Manufacturer Part Number:

    BC858BHZGT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-06-29

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    210

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

BC858BHZGT116 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the BC858BHZGT116 is -40°C to 125°C.
  • To ensure the stability of the output voltage, it is recommended to use a capacitor with a value of 1uF or more between the VOUT and GND pins, and to keep the input voltage within the specified range.
  • The maximum input voltage that the BC858BHZGT116 can handle is 18V. Exceeding this voltage may cause damage to the device.
  • The BC858BHZGT116 is designed for low-current applications. If you need a high-current LDO, consider using a different device or consulting with ROHM Semiconductor for a suitable alternative.
  • The power dissipation of the BC858BHZGT116 can be calculated using the formula: Pd = (VIN - VOUT) x IOUT. Make sure to consider the thermal resistance and junction temperature to ensure safe operation.

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