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BCX42E6327 - Infineon

Description: Infineon BCX42E6327 PNP Bipolar Transistor, 800 mA, 125 V, 3-Pin SOT-23

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Symbol
BCX42E6327 - Infineon - PCB symbol
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PCB Footprints
BCX42E6327 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23_2
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3D Models
BCX42E6327 - Infineon - 3D model - SOT23 (3-Pin) - SOT23_2
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BCX42E6327 Details

  • Manufacturer Part Number:

    BCX42E6327

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Collector Current-Max (IC):

    0.8 A

  • Collector-Emitter Voltage-Max:

    125 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

BCX42E6327 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 mm clearance around the device for heat dissipation.
  • Implement a proper thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the specified junction temperature range (TJ) of -40°C to 150°C.
  • Monitor the device's temperature, voltage, and current. Implement over-temperature protection (OTP), over-voltage protection (OVP), and over-current protection (OCP) to prevent damage and ensure reliable operation.
  • Optimize the switching frequency based on the application's requirements. A higher switching frequency can reduce losses, but may increase EMI. A lower switching frequency can reduce EMI, but may increase losses. Consult the datasheet and application notes for guidance.
  • Use a gate drive circuit with a high-current, low-impedance design. Choose components with low parasitic inductance and capacitance. Ensure the gate drive voltage is within the recommended range (typically 10-15 V).

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BCX42E6327 Overview

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BCX42E6327 Alternates

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Part Image BCX42E6327 Siemens

Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, PNP, Silicon