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BD13510STU - onsemi

Description: Minimum Gain - hFE = 63 @ IC = 150 mA; BD135, BD137, BD139 are complementary with BD136, BD138, BD140; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
BD13510STU - onsemi - PCB symbol
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PCB Footprints
BD13510STU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-126-3
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3D Models
BD13510STU - onsemi - 3D model - Transistor Outline, Vertical - TO-126-3
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BD13510STU Details

  • Manufacturer Part Number:

    BD13510STU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-126-3

  • Manufacturer Package Code:

    340AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    63

  • JEDEC-95 Code:

    TO-126

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    13 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

BD13510STU Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Use low-ESR capacitors (e.g., X5R or X7R dielectrics) with a minimum capacitance of 10 μF for the input and 22 μF for the output. Ensure the capacitors are placed close to the device and connected with short, low-inductance traces.
  • Use a shielded enclosure, keep the device and associated components away from the PCB edge, and use a common-mode choke or ferrite bead on the input lines. Ensure proper grounding and decoupling of the device.
  • Apply the input voltage (VIN) first, followed by the enable signal (EN). Ensure the input voltage is stable before applying the enable signal.

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BD13510STU Overview

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BD13510STU Alternates

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Part Image BD13510STU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin