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BD136G - onsemi

Description: BD 136, 138, 140 are complementary with BD 135, 137, 139; DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc; Pb-Free Package is Available*

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PCB Footprints
BD136G - onsemi PCB footprint - Other - Other - TO−225 CASE 77−09 ISSUE AD_2024-4
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3D Models
BD136G - onsemi  - 3D model - Other - TO−225 CASE 77−09 ISSUE AD_2024-4
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BD136G Details

  • Manufacturer Part Number:

    BD136G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    1.25 W

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    5 V

BD136G Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD136G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against each other, taking into account the thermal limitations.
  • To ensure the BD136G is properly biased for linear operation, the base-emitter voltage (VBE) should be set between 0.6V to 0.8V, and the collector-emitter voltage (VCE) should be set to at least 1V to 2V above the emitter voltage. Additionally, the base current should be limited to prevent saturation.
  • For optimal thermal management, the BD136G should be mounted on a PCB with a large copper area to dissipate heat. A thermal via or thermal pad can be used to improve heat dissipation. The device should be placed near a heat sink or a metal plate to further improve thermal performance.
  • While the BD136G is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, and it may not be suitable for high-frequency switching applications. However, it can be used in low-frequency switching applications with proper design considerations.
  • To protect the BD136G from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage. Additionally, the device's pins should be connected to a ground plane or a protective diode to prevent ESD damage.

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BD136G Overview

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Part Image BD136 KEC

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD136 NXP Semiconductors

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD136 Samsung Semiconductor

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD136 Central Semiconductor Corp

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD136-BP Micro Commercial Components

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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