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BD137G - onsemi

Description: BD135, BD137, BD139 are complementary with BD136, BD138, BD140; Minimum DC Current Gain - hFE = 40 @ IC = 0.15 A; These are Pb-Free Devices

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PCB Footprints
BD137G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
BD137G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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BD137G Details

  • Manufacturer Part Number:

    BD137G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD137G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the BD137G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the specified thermal boundaries to ensure reliable operation.
  • To ensure the BD137G is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, it's crucial to ensure the device is operated within its recommended operating conditions, including the maximum collector current (IC) and power dissipation (PD).
  • For optimal performance and reliability, it's recommended to follow good PCB layout practices, such as keeping the device away from heat sources, using a solid ground plane, and minimizing thermal resistance. A heat sink or thermal pad can be used to improve thermal management, especially in high-power applications. The datasheet provides guidelines for thermal resistance and maximum junction temperature, which should be considered when designing the PCB layout.
  • While the BD137G is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, with a typical rise time (tr) of around 10-20ns. Additionally, the device's maximum collector current (IC) and power dissipation (PD) should be carefully considered to avoid overheating and ensure reliable operation. It's recommended to consult the datasheet and application notes for specific guidance on using the BD137G in switching applications.
  • Electrostatic discharge (ESD) protection is crucial for the BD137G, as it can be damaged by static electricity. To handle ESD protection, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the device in an anti-static bag or container. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays, to protect the device from voltage transients and surges.

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BD137G Overview

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Part Image BD137 Rochester Electronics LLC

1.5A, 60V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

Part Image BD137 Central Semiconductor Corp

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD137 Baneasa SA

Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD137 STMicroelectronics

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD137 Crimson Semiconductor Inc

Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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