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BD139G - onsemi

Description: BD135, BD137, BD139 are complementary with BD136, BD138, BD140; Mininum Current Gain - hFE = 40 @ IC = 150 mA; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
BD139G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
BD139G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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BD139G Details

  • Manufacturer Part Number:

    BD139G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD139G Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD139G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 10A and 30V.
  • To ensure linear operation, the BD139G should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V and 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
  • A good PCB layout for the BD139G should provide a low-thermal-resistance path from the device to a heat sink or copper plane. A minimum of 2oz copper thickness is recommended, and the device should be placed near a thermal vias or a heat sink to dissipate heat efficiently.
  • Yes, the BD139G can be used in switching applications, but it's not optimized for high-frequency switching. The device has a relatively slow switching time (around 10us) and a moderate current gain (around 100). It's suitable for low-frequency switching applications, such as in power supplies or motor control circuits.
  • To protect the BD139G from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the PCB has ESD protection diodes or resistors, and consider adding a TVS (transient voltage suppressor) diode or a Zener diode to the circuit for additional protection.

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BD139G Overview

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BD139G Alternates

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Image Part Number Model
Part Image BD139G Rochester Electronics LLC

1.5A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

Part Image BD139 Continental Device India Ltd

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD139 Rochester Electronics LLC

1.5A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

Part Image BD139 NXP Semiconductors

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD139 Crimson Semiconductor Inc

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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