Part Image

BD140G - onsemi

Description: BD 136, 138, 140 are complementary with BD 135, 137, 139; DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc; Pb-Free Package is Available*

Download BD140G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BD140G - onsemi PCB footprint - Other - Other - BD140G
click to zoom
3D Models
BD140G - onsemi  - 3D model - Other - BD140G
click to zoom

BD140G Details

  • Manufacturer Part Number:

    BD140G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    12.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD140G Frequently Asked Questions (FAQs)

  • The maximum SOA for the BD140G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 10A and 60V.
  • To ensure linear operation, the BD140G should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V and 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
  • The recommended heatsink for the BD140G depends on the application and power dissipation requirements. A heatsink with a thermal resistance of around 10°C/W or lower is recommended. The heatsink should also be designed to accommodate the TO-220 package.
  • While the BD140G is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, and it may not be suitable for high-frequency switching applications. However, it can be used in low-frequency switching applications with proper design considerations.
  • To protect the BD140G from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should also be stored in an anti-static package or bag when not in use.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BD140G Overview

Use the download button to access the BD140G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BD140, or try a keyword search, such as Power Bipolar Transistors

Parts related to BD140G

Showing 0 results

BD140G Alternates

Showing results

Image Part Number Model
Part Image BD140 Continental Device India Ltd

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD140 onsemi

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Part Image BD140 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD140 Baneasa SA

Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD140 Samsung Semiconductor

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BD140G, check out Findchips.com