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BD242BG - onsemi

Description: Collector-Emitter Saturation Voltage - VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min.) BD242B = 100 Vdc (Min.) BD241C, BD242C; High Current Gain - Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc; Compact TO-220 AB Package; Pb-Free Packages are Available

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BD242B Samsung Semiconductor

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BD634 onsemi

TRANSISTOR,BJT,PNP,45V V(BR)CEO,2A I(C),TO-220AB

BD636 onsemi

TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),TO-220AB

BD242B onsemi

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BD242B-S Bourns Inc

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3

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Image	Part Number	Model
	BD242B Samsung Semiconductor Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
	BD634 onsemi TRANSISTOR,BJT,PNP,45V V(BR)CEO,2A I(C),TO-220AB
	BD636 onsemi TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),TO-220AB
	BD242B onsemi Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
	BD242B-S Bourns Inc Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3
For a full list of alternate parts for BD242BG, check out Findchips.com

BD242BG - onsemi

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