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BD442G - onsemi

Description: Pb-Free Packages are Available

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PCB Footprints
BD442G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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BD442G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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BD442G Details

  • Manufacturer Part Number:

    BD442G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

BD442G Frequently Asked Questions (FAQs)

  • The BD442G can operate safely up to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • To ensure proper biasing, the BD442G requires a minimum of 2.5V on the gate-source voltage (Vgs) and a maximum of 20V on the drain-source voltage (Vds).
  • The BD442G has a maximum continuous drain current (Id) rating of 10A, and a maximum pulsed drain current rating of 20A.
  • To protect the BD442G, use a voltage regulator to limit the input voltage, and consider adding overcurrent protection devices such as fuses or current-limiting resistors.
  • Yes, the BD442G is suitable for high-frequency switching applications up to 100 kHz, but be aware of the device's switching losses and thermal considerations.

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BD442G Overview

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Part Image BD442 Rochester Electronics LLC

4A, 80V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

Part Image BD442S Rochester Electronics LLC

4A, 80V, PNP, Si, POWER TRANSISTOR, TO-126

Part Image BD442STU onsemi

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD442 onsemi

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Part Image BD442 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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