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BD676AG - onsemi

Description: Obsolete - 4.0 A, 45 V PNP Darlington Bipolar Power Transistor

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PCB Footprints
BD676AG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−225*-*
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3D Models
BD676AG - onsemi  - 3D model - Transistor Outline, Vertical - TO−225*-*
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BD676AG Details

  • Manufacturer Part Number:

    BD676AG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD676AG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the IC.
  • Use a capacitor with an ESR ≤ 100 mΩ and ensure the capacitor is placed close to the IC. Add a 1-2 nF ceramic capacitor in parallel to filter high-frequency noise.
  • The maximum allowed voltage on the EN pin is 6 V. Exceeding this voltage may damage the IC.
  • The BD676AG is rated for operation up to 125°C. However, ensure proper thermal design and consider derating the output current at high temperatures.
  • Check the PCB layout, ensure proper decoupling, and verify the output capacitor selection. Add a 10-100 nF ceramic capacitor in parallel with the output capacitor to filter high-frequency noise.

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BD676AG Overview

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Part Image BD676A Rochester Electronics LLC

4A, 45V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

Part Image BD676A Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD676A Samsung Semiconductor

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

Part Image BD676A STMicroelectronics

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin