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BD682G - onsemi

Description: BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703; High DC Current Gain - hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc; BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681; Monolithic Construction; Pb-Free Packages are Available

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PCB Footprints
BD682G - onsemi PCB footprint - Other - Other - TO−225 CASE 77−09 ISSUE AD
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3D Models
BD682G - onsemi  - 3D model - Other - TO−225 CASE 77−09 ISSUE AD
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BD682G Details

  • Manufacturer Part Number:

    BD682G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BD682G Frequently Asked Questions (FAQs)

  • The BD682G can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure stable operation, it's recommended to use a heat sink and ensure good thermal conductivity between the device and the heat sink. Additionally, follow proper PCB design and layout guidelines to minimize thermal resistance.
  • The recommended input capacitor value is 10uF to 22uF, with a voltage rating of 25V or higher. This ensures stable operation and minimizes output voltage ripple.
  • Yes, the BD682G can handle high currents up to 3A. However, it's essential to ensure proper thermal management and follow the recommended PCB design guidelines to prevent overheating.
  • Use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions. You can also add external protection components, such as TVS diodes or zener diodes, to protect the BD682G from voltage transients.

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BD682G Overview

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BD682G Alternates

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Part Image BD682 Continental Device India Ltd

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD682T onsemi

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Part Image BD682 Central Semiconductor Corp

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD682 Crimson Semiconductor Inc

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image BD682 onsemi

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

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