Part Image

BDV64BG - onsemi

Description: High DC Current Gain HFE = 1000 (min.) @ 5 Adc; Monolithic Construction with Built-in Base Emitter Shunt Resistors; These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

Download BDV64BG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BDV64BG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - BDV64BG*1
click to zoom
3D Models
BDV64BG - onsemi  - 3D model - Transistor Outline, Vertical - BDV64BG*1
click to zoom

BDV64BG Details

  • Manufacturer Part Number:

    BDV64BG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    CASE 340D-02, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    0.1 MHz

BDV64BG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure the input voltage is within the recommended range (2.7V to 5.5V). Use a stable voltage regulator and decouple the power supply lines with 10uF and 100nF capacitors.
  • The maximum allowed current through the output pins is 20mA. Exceeding this limit may cause damage to the device or affect its reliability.
  • Use ESD protection diodes (e.g., 1.5KE6.8A) and TVS diodes (e.g., SMAJ5.0A) to protect the device from ESD and overvoltage. Ensure the protection devices are rated for the maximum voltage and current.
  • The recommended operating temperature range is -40°C to 125°C. Operating outside this range may affect the device's performance and reliability.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BDV64BG Overview

Use the download button to access the BDV64BG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BDV64, or try a keyword search, such as Power Bipolar Transistors

Parts related to BDV64BG

Showing 0 results

BDV64BG Alternates

Showing results

Image Part Number Model
Part Image BDV64B onsemi

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin

Part Image BDV64BLEADFREE Central Semiconductor Corp

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin

Part Image BDV64B Central Semiconductor Corp

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin

Part Image BDV64B Bourns Inc

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin