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BDV65BG - onsemi

Description: Obsolete - 15 A, 100 V NPN Darlington Bipolar Power Transistor

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PCB Footprints
BDV65BG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-218 CASE340D-02
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3D Models
BDV65BG - onsemi  - 3D model - Transistor Outline, Vertical - TO-218 CASE340D-02
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BDV65BG Details

  • Manufacturer Part Number:

    BDV65BG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    CASE 340D-02, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BDV65BG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Use an output capacitor with an ESR < 1 ohm and ensure the capacitor is placed close to the IC. Add a 1-10nF ceramic capacitor in parallel to filter high-frequency noise.
  • The maximum allowed voltage on the EN pin is 6V. Exceeding this voltage may damage the IC.
  • The BDV65BG is rated for operation up to 125°C. However, derating the output current and ensuring proper thermal management are crucial for reliable operation in high-temperature environments.
  • Use a shielded inductor, keep the switching node (SW) away from sensitive nodes, and add a common-mode choke or ferrite bead to the output to reduce EMI.

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Part Image BDV65BLEADFREE Central Semiconductor Corp

Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin

Part Image BDV65B onsemi

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin