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BDW42 - onsemi

Description: Obsolete - 15 A, 100 V NPN Darlington Bipolar Power Transistor

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BDW42 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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BDW42 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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BDW42 Details

  • Manufacturer Part Number:

    BDW42

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Base Capacitance-Max:

    200 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    240

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    85 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

  • VCEsat-Max:

    3 V

BDW42 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BDW42 is a standard TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, such as a heat sink with a thermal resistance of 1°C/W or less, and to keep the junction temperature (Tj) below 150°C.
  • The maximum safe operating area (SOA) for the BDW42 is defined by the voltage and current ratings. The device can operate safely up to 400V and 4A, but it's essential to check the SOA curves in the datasheet to ensure the device is operated within the safe region.
  • To protect the BDW42 from electrostatic discharge (ESD), it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap, mat, or packaging. Additionally, the device should be stored in a conductive bag or container to prevent ESD damage.
  • The recommended gate resistor value for the BDW42 depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω and 100Ω to ensure proper switching and to prevent oscillations.

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BDW42 Overview

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BDW42 Alternates

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Image Part Number Model
Part Image BDW42AU onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42BA onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42BC onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42AJ onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDW42BD onsemi

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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