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BDX33CG - onsemi

Description: Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C; Monolithic Construction with Build-In Base-Emitter Shunt resistors; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C; High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0; Pb-Free Packages are Available

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PCB Footprints
BDX33CG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
BDX33CG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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BDX33CG Details

  • Manufacturer Part Number:

    BDX33CG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    70 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

BDX33CG Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
  • Add a 1-10 nF capacitor in parallel with a 1-10 kΩ resistor between the input pin and ground to filter out noise and ensure stability.
  • The SOA is limited by the maximum junction temperature (Tj) of 150°C. Ensure that the device operates within the recommended voltage and current limits to prevent overheating.
  • No, the BDX33CG is not designed for switch-mode operation. It's intended for linear regulator applications only.
  • Use a shielded enclosure, keep the input and output capacitors close to the device, and use a common-mode choke or ferrite bead to filter out high-frequency noise.

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Manufacturer Collaborated
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System Verified
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BDX33CG Overview

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Part Image BDX33C STMicroelectronics

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Part Image BDX33C Continental Device India Ltd

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDX33C Fairchild Semiconductor Corporation

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDX33C Mospec Semiconductor Corp

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Part Image BDX33C onsemi

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BDX33CG, check out Findchips.com