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BDX53BG - onsemi

Description: High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc; Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C; TO-220AB Compact Package; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc; Pb-Free Packages are Available

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PCB Footprints
BDX53BG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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3D Models
BDX53BG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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BDX53BG Details

  • Manufacturer Part Number:

    BDX53BG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

BDX53BG Frequently Asked Questions (FAQs)

  • The SOA for the BDX53BG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power ratings, as well as its thermal resistance and maximum junction temperature.
  • To ensure linear operation, the BDX53BG should be biased in the active region, where the base-emitter voltage (VBE) is around 0.7V and the collector-emitter voltage (VCE) is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the recommended range.
  • A good PCB layout for the BDX53BG should minimize thermal resistance by using a large copper area for heat dissipation. The transistor should be placed near a heat sink or a thermal pad, and the PCB should have adequate clearance around the device to prevent thermal coupling. A thermal interface material (TIM) can be used to improve heat transfer between the device and the heat sink.
  • To protect the BDX53BG from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure the PCB has adequate ESD protection, such as TVS diodes or ESD protection arrays, and follow proper assembly and handling procedures to prevent ESD damage.
  • The BDX53BG has a typical lifespan of 10-15 years, depending on operating conditions, temperature, and usage. The device is designed to meet the reliability requirements of automotive and industrial applications, with a failure rate of less than 10 FIT (failures per billion hours) at 125°C.

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BDX53BG Overview

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Part Image BDX53B STMicroelectronics

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDX53B JW Miller

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

Part Image BDX53B onsemi

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDX53B Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BDX53B Crimson Semiconductor Inc

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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