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BF1101WR,115 - NXP

Description: RF Mosfet N-Channel Dual Gate 5 V 12 mA 800MHz CMPAK-4

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Symbol
BF1101WR,115 - NXP - PCB symbol
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PCB Footprints
BF1101WR,115 - NXP PCB footprint - Other - Other - SOT343R
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3D Models
BF1101WR,115 - NXP - 3D model - Other - SOT343R
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BF1101WR,115 Details

  • Manufacturer Part Number:

    BF1101WR,115

  • Brand Name:

    NXP Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT343R

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    7 V

  • Drain Current-Max (ID):

    0.03 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.035 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DUAL GATE, ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BF1101WR,115 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces short and away from digital signals. Use a 50-ohm microstrip line for the RF output.
  • Use a 50-ohm antenna with a quarter-wavelength monopole or a dipole antenna. The antenna should be matched to the IC's output impedance. Consider using a balun or a transformer to improve impedance matching.
  • The BF1101WR,115 can handle up to 30 dBm (1W) of output power. However, the maximum power handling capability depends on the specific application, PCB design, and thermal management.
  • Use a thermal pad or a heat sink to dissipate heat. Ensure good airflow around the device. Follow the recommended operating conditions and derating guidelines in the datasheet.
  • Use ESD protection diodes or TVS diodes on the RF input and output pins. Ensure that the PCB design and layout minimize the risk of ESD damage. Follow the recommended ESD handling procedures during assembly and testing.

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BF1101WR,115 Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET