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BF244A - onsemi

Description: N-Channel RF Amplifier

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BF244A - onsemi PCB footprint - Other - Other - TO127P254X732-3
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BF244A - onsemi  - 3D model - Other - TO127P254X732-3
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BF244A Details

  • Manufacturer Part Number:

    BF244A

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 29-11

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    0.05 A

  • FET Technology:

    JUNCTION

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BF244A Frequently Asked Questions (FAQs)

  • The maximum SOA for the BF244A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure linear operation, the BF244A should be biased in the active region, where the base-emitter voltage (Vbe) is around 0.7V and the collector-emitter voltage (Vce) is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the specified range.
  • For optimal performance and thermal management, it's recommended to use a multi-layer PCB with a solid ground plane, and to place the BF244A near a heat sink or a thermal pad. The device should be mounted with the emitter pin facing downwards to minimize thermal resistance. A thermal interface material (TIM) can be used to improve heat transfer between the device and the heat sink.
  • While the BF244A is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching frequency should be limited to around 10-20 kHz to avoid excessive power losses and ensure reliable operation. Additionally, the device's collector current should be limited to prevent overheating and ensure a safe operating area.
  • To protect the BF244A from ESD, it's recommended to use anti-static packaging and handling procedures during storage and assembly. Additionally, ESD protection devices such as TVS diodes or ESD protection arrays can be used to protect the device from external ESD events.

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Image Part Number Model
Part Image BF244A Fairchild Semiconductor Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92