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BF999E6327 - Infineon

Description: Infineon BF999E6327 N-channel MOSFET Transistor, 1.4 A, 30 V, 3-Pin SOT-23

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PCB Footprints
BF999E6327 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - 3-Pin SOT-23
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3D Models
BF999E6327 - Infineon  - 3D model - SOT23 (3-Pin) - 3-Pin SOT-23
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BF999E6327 Details

  • Manufacturer Part Number:

    BF999E6327

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.03 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BF999E6327 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in the application note AN191 'PCB Layout Recommendations for BFP620/630/632' which can be applied to the BF999E6327. It's essential to follow these guidelines to ensure optimal performance, minimize noise, and reduce electromagnetic interference (EMI).
  • The selection of external components, such as capacitors, inductors, and resistors, depends on the specific application and operating conditions. Infineon provides guidance on component selection in the datasheet and application notes. Additionally, engineers can use online tools, such as the Infineon Component Selector, to find suitable components.
  • The BF999E6327 has a maximum junction temperature of 150°C. To ensure reliable operation, engineers should implement proper thermal management, such as using a heat sink, thermal interface material, and ensuring good airflow. The thermal resistance of the package (RthJA) is specified in the datasheet, and engineers can use this value to estimate the junction temperature.
  • Infineon provides troubleshooting guides and application notes that address common issues with the BF999E6327. Engineers can also use simulation tools, such as Infineon's PSpice model, to simulate the circuit and identify potential issues. Additionally, consulting with Infineon's support team or seeking guidance from experienced engineers can be helpful in resolving complex issues.
  • Yes, the BF999E6327 is sensitive to electrostatic discharge (ESD). Engineers should follow proper ESD handling procedures, such as using ESD-safe equipment, wrist straps, and mats, to prevent damage to the device. Additionally, incorporating ESD protection components, such as TVS diodes, into the circuit design can help protect the device from ESD events.

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BF999E6327 Overview

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Part Image BF999 Siemens

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Image BF999E6327 Siemens

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET