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BFG97,115 - NXP

Description: RF WIDEBAND TRANSISTOR, NPN, 15V, 5.5GHZ, 3SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5.5GHz; Power Dissipation Pd:1W; DC Collector Current:100mA; DC Current Gain hFE:80hFE; MSL:-RoHS Compliant: Yes

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PCB Footprints
BFG97,115 - NXP PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SC-73 (SOT223)
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3D Models
BFG97,115 - NXP  - 3D model - SOT223 (3-Pin) - SC-73 (SOT223)
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BFG97,115 Details

  • Manufacturer Part Number:

    BFG97,115

  • Brand Name:

    NXP Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-73

  • Package Description:

    PLASTIC, SC-73, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT223

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    1.5 pF

  • Collector-Emitter Voltage-Max:

    15 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    CECC

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    5500 MHz

BFG97,115 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.
  • Use a voltage regulator to provide a stable voltage supply. Ensure the bias voltage is within the recommended range (typically 5-12V) and use a decoupling capacitor (e.g., 100nF) to filter out noise.
  • The BFG97,115 can handle up to 2W of power. However, it's recommended to derate the power handling to 1.5W or less to ensure reliable operation and minimize thermal stress.
  • Use a heat sink with a thermal conductivity of at least 1W/m-K. Ensure good thermal contact between the device and heat sink using a thermal interface material (e.g., thermal paste or thermal tape).
  • Use ESD protection diodes (e.g., 1N4148) on the input and output pins. Ensure the PCB design includes a clear path for ESD discharge to ground. Handle the device by the body or use an anti-static wrist strap to prevent ESD damage.

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BFG97,115 Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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