Part Image

BFP183WH6327XTSA1 - Infineon

Description: Trans RF BJT NPN 12V 0.065A 450mW Automotive 4-Pin(3+Tab) SOT-343 T/R

Download BFP183WH6327XTSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BFP183WH6327XTSA1 - Infineon PCB footprint - Other - Other - BFP183WH6327XTSA1-1
click to zoom
3D Models
BFP183WH6327XTSA1 - Infineon  - 3D model - Other - BFP183WH6327XTSA1-1
click to zoom

BFP183WH6327XTSA1 Details

  • Manufacturer Part Number:

    BFP183WH6327XTSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.065 A

  • Collector-Base Capacitance-Max:

    0.54 pF

  • Collector-Emitter Voltage-Max:

    12 V

  • Configuration:

    SINGLE

  • Highest Frequency Band:

    L BAND

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    NPN

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    8000 MHz

BFP183WH6327XTSA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in the application note AN191 'Layout Recommendations for RF Transistors' which should be followed for optimal performance.
  • The datasheet provides a recommended biasing circuit, but it's essential to consult the application note AN192 'Biasing of RF Transistors' for detailed information on biasing and stabilization techniques.
  • The device has a maximum junction temperature of 150°C. Ensure proper heat sinking and thermal management to prevent overheating. Consult the thermal management section in the datasheet for more information.
  • Yes, the BFP183WH6327XTSA1 can be used in a push-pull configuration. However, it's essential to consult the application note AN193 'Push-Pull Amplifier Design' for specific design guidelines and considerations.
  • Follow the standard ESD precautions and store the devices in a dry, cool place. Avoid exposing the devices to extreme temperatures, humidity, or physical stress. Consult the packaging and storage section in the datasheet for more information.

Trust Checks

This model has been verified by system checks.
System Verified
Sponsored

BFP183WH6327XTSA1 Overview

Use the download button to access the BFP183WH6327XTSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BFP18, or try a keyword search, such as RF Small Signal Bipolar Transistors

Parts related to BFP183WH6327XTSA1

Showing 0 results