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BFP196E6327 - Infineon

Description: Infineon BFP196E6327 NPN RF Bipolar Transistor, 150 mA, 12 V, 4-Pin SOT-143

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BFP196E6327 - Infineon PCB footprint - Other - Other - SOT143
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BFP196E6327 - Infineon  - 3D model - Other - SOT143
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BFP196E6327 Details

  • Manufacturer Part Number:

    BFP196E6327

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    TR, 7 INCH: 3000

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    1.4 pF

  • Collector-Emitter Voltage-Max:

    12 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    70

  • Highest Frequency Band:

    L BAND

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.7 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    7500 MHz

BFP196E6327 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a high current capability (e.g., 2A or higher) and a low propagation delay (e.g., <10ns) to ensure proper switching of the BFP196E6327. The gate driver should also be compatible with the device's gate-source voltage rating.
  • According to Infineon's application note AN2013-03, the maximum allowed voltage stress on the BFP196E6327 during switching is 1.5 times the maximum rated voltage (Vds(max)) for a duration of 100ns or less.
  • Infineon recommends following the guidelines in their application note AN2013-03 for EMC design considerations, including using a shielded layout, minimizing loop areas, and using filtering components to reduce electromagnetic interference (EMI).
  • The BFP196E6327 is designed for high-frequency applications up to 2.7 GHz. However, the recommended operating frequency range depends on the specific application and should be determined through simulation and testing.

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