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BFR193WH6327 - Infineon

Description: Infineon BFR193WH6327 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

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PCB Footprints
BFR193WH6327 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT323-ren1
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3D Models
BFR193WH6327 - Infineon  - 3D model - SOT23 (3-Pin) - SOT323-ren1
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BFR193WH6327 Details

  • Manufacturer Part Number:

    BFR193WH6327

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-323, 3 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    TR, 7 INCH: 3000

  • Collector Current-Max (IC):

    0.08 A

  • Collector-Base Capacitance-Max:

    1 pF

  • Collector-Emitter Voltage-Max:

    12 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    70

  • Highest Frequency Band:

    L BAND

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.58 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    8000 MHz

BFR193WH6327 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN191 'Layout Recommendations for RF Transistors' which can be applied to the BFR193WH6327. It's essential to follow these guidelines to minimize parasitic effects and ensure optimal performance.
  • The BFR193WH6327 has a high power density, so thermal management is crucial. Infineon recommends using a heat sink with a thermal resistance of ≤ 10 K/W and ensuring good thermal contact between the device and the heat sink. Additionally, the PCB should be designed to dissipate heat efficiently.
  • The maximum safe operating area (SOA) for the BFR193WH6327 is not explicitly stated in the datasheet. However, Infineon provides SOA curves in their application note AN192 'Safe Operating Area of RF Transistors' which can be used as a guideline. It's essential to ensure that the device operates within the recommended SOA to prevent damage or degradation.
  • The BFR193WH6327 has a specific input and output impedance, which must be matched to ensure optimal performance. Infineon provides impedance data in the datasheet, and engineers can use impedance matching networks or simulation tools like ADS or AWR to design the matching circuits.
  • The recommended biasing scheme for the BFR193WH6327 is not explicitly stated in the datasheet. However, Infineon provides biasing guidelines in their application note AN193 'Biasing of RF Transistors' which can be applied to this device. It's essential to ensure that the biasing scheme is designed to provide stable operation and optimal performance.

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BFR193WH6327 Overview

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