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BFR840L3RHESD - Infineon

Description: Robust Low Noise Silicon Germanium Bipolar RF Transistor

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PCB Footprints
BFR840L3RHESD - Infineon PCB footprint - Other - Other - TSLP-3-9_1
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3D Models
BFR840L3RHESD - Infineon  - 3D model - Other - TSLP-3-9_1
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BFR840L3RHESD Details

  • Manufacturer Part Number:

    BFR840L3RHESD

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TSLP-3-9, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    EMITTER

  • Collector Current-Max (IC):

    0.035 A

  • Collector-Base Capacitance-Max:

    0.052 pF

  • Collector-Emitter Voltage-Max:

    2.25 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    150

  • Highest Frequency Band:

    X BAND

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Packing Method:

    TR

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.075 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON GERMANIUM

  • Transition Frequency-Nom (fT):

    75000 MHz

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BFR840L3RHESD Overview

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