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BFU660F,115 - NXP

Description: RF Bipolar Transistors Single NPN 21GHz

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BFU660F,115 - NXP PCB footprint - Other - Other - SOT343F-2025-54
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BFU660F,115 Details

  • Manufacturer Part Number:

    BFU660F,115

  • Source Url Status Check Date:

    2013-06-14 00:00:00

  • Brand Name:

    NXP Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    DFP

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT343F

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    2

  • Additional Feature:

    LOW NOISE

  • Case Connection:

    EMITTER

  • Collector Current-Max (IC):

    0.06 A

  • Collector-Base Capacitance-Max:

    0.138 pF

  • Collector-Emitter Voltage-Max:

    5.5 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    90

  • Highest Frequency Band:

    X BAND

  • JESD-30 Code:

    R-PDSO-F4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.225 W

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    21000 MHz

BFU660F,115 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the BFU660F,115 is 5.5 GHz.
  • The typical noise figure of the BFU660F,115 is 0.6 dB.
  • The maximum power consumption of the BFU660F,115 is 35 mA from a 5V supply.
  • No, the BFU660F,115 is not suitable for high-power applications. It is designed for low-power, low-noise amplifier applications.
  • The BFU660F,115 is available in a SOT323 package.

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BFU660F,115 Overview

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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