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BLW86 - Advanced Semiconductor, Inc.

Description: RF Bipolar Transistors RF Transistor

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BLW86 Details

  • Manufacturer Part Number:

    BLW86

  • Part Life Cycle Code:

    Active

  • Package Description:

    0.380 INCH, FM-4

  • Pin Count:

    4

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    Advanced Semiconductor Inc

  • YTEOL:

    4

  • Collector Current-Max (IC):

    5 A

  • Collector-Base Capacitance-Max:

    65 pF

  • Collector-Emitter Voltage-Max:

    35 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JESD-30 Code:

    O-CRFM-F4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    105 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    RADIAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BLW86 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BLW86 is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad diameter of 2.5mm.
  • To ensure reliable operation of the BLW86 in high-temperature environments, it's essential to provide adequate heat sinking, such as a thermal interface material (TIM) and a heat sink with a thermal resistance of less than 10°C/W.
  • The maximum safe operating area (SOA) for the BLW86 is typically defined by the manufacturer as a maximum voltage of 80V, a maximum current of 10A, and a maximum power dissipation of 50W. However, it's essential to consult the datasheet and application notes for specific SOA curves and guidelines.
  • While the BLW86 can be used as a switch, its switching frequency is limited by its internal capacitances and resistances. For high-frequency applications above 100 kHz, it's recommended to consider a more suitable device with lower capacitances and resistances, such as a MOSFET or an IGBT.
  • To protect the BLW86 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider adding ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design.

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BLW86 Overview

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Part Image VHB40-28F Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN