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BS170-D27Z - onsemi

Description: MOSFET N-Ch Enhancement Mode Field Effect

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BS170-D27Z - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2
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BS170-D27Z - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2
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BS170-D27Z Details

  • Manufacturer Part Number:

    BS170-D27Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3 LF

  • Manufacturer Package Code:

    135AR

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.05

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.5 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.83 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BS170-D27Z Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the BS170-D27Z is 2.7V to 30V.
  • To ensure stability, it's recommended to use a bypass capacitor (e.g., 10nF to 100nF) between the drain and source pins, and to minimize the lead length and inductance of the PCB traces.
  • The maximum power dissipation of the BS170-D27Z is 1.5W at a junction temperature of 25°C. However, this value can be derated based on the ambient temperature and other factors.
  • While the BS170-D27Z can be used as a switch, it's not recommended for high-current applications due to its limited current rating (500mA continuous, 1A peak). For high-current applications, consider using a more suitable device, such as a power MOSFET.
  • To protect the BS170-D27Z from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the PCB and components are properly grounded. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.

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BS170-D27Z Overview

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Part Image BS170J16Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BS170J60Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image BS170/D28Z(L34Z) National Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image BS170/D89Z(L34Z) National Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image BS170/D28Z{L34Z} Texas Instruments

500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

For a full list of alternate parts for BS170-D27Z, check out Findchips.com