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BSC007N04LS6 - Infineon

Description: Infineon TRENCH <= 40V

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BSC007N04LS6 - Infineon PCB footprint - Other - Other - TDSON-8FL
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BSC007N04LS6 Details

  • Manufacturer Part Number:

    BSC007N04LS6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    674 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    319 A

  • Drain-source On Resistance-Max:

    0.001 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    89 pF

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    1524 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC007N04LS6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC007N04LS6 is -55°C to 175°C, as specified in the datasheet. However, it's essential to consider the derating curves for power dissipation and junction temperature to ensure reliable operation.
  • To ensure proper cooling, consider the thermal resistance (Rth) of the device, which is 2.5 K/W for the BSC007N04LS6. Use a heat sink with a sufficient thermal interface material, and follow the recommended PCB layout and thermal design guidelines from Infineon.
  • The recommended gate drive voltage for the BSC007N04LS6 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. A higher gate drive voltage can reduce switching losses, but be cautious of gate oxide reliability.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design to prevent damage to the BSC007N04LS6. Use a voltage clamp or a zener diode for OVP, and a current sense resistor or a dedicated OCP IC for OCP.
  • The maximum allowed drain-source voltage (Vds) for the BSC007N04LS6 is 40 V. Exceeding this voltage can lead to device failure or reduced reliability.

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