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BSC012N06NSATMA1 - Infineon

Description: MOSFET TRENCH 40<-<100V

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BSC012N06NSATMA1 - Infineon PCB footprint - Other - Other - BSC012N06NSATMA1-2
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BSC012N06NSATMA1 - Infineon  - 3D model - Other - BSC012N06NSATMA1-2
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BSC012N06NSATMA1 Details

  • Manufacturer Part Number:

    BSC012N06NSATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    911 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.0012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    214 W

  • Pulsed Drain Current-Max (IDM):

    1224 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSC012N06NSATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC012N06NSATMA1 is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • For optimal performance, use a PCB layout with a low-inductance path for the drain and source pins, and keep the gate trace as short as possible to minimize ringing and oscillations.
  • Yes, the BSC012N06NSATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

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