Part Image

BSC015NE2LS5I - Infineon

Description: N-CH 25V 100A 1,5mOhm OptiMOSTM5 Power-MOSFET, 25 V PG-TDSON-8

Download BSC015NE2LS5I Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSC015NE2LS5I - Infineon PCB footprint - Other - Other - BSC015NE2LS5I-1
click to zoom
3D Models
BSC015NE2LS5I - Infineon  - 3D model - Other - BSC015NE2LS5I-1
click to zoom

BSC015NE2LS5I Details

  • Manufacturer Part Number:

    BSC015NE2LS5I

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.0022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC015NE2LS5I Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching.
  • The maximum allowed overcurrent is typically 2-3 times the rated current. To protect the module, use a fast-acting fuse or a current sensing circuit with a shutdown mechanism to prevent damage from overcurrent conditions.
  • Ensure good thermal contact between the module and the heat sink, and use a heat sink with a thermal resistance of ≤ 0.5 K/W. Also, consider using a fan or other forced-air cooling method to improve heat dissipation.
  • Store the module in a dry, cool place, away from direct sunlight and moisture. Handle the module by the edges, avoiding touching the electrical contacts or components. Use an anti-static wrist strap or mat when handling the module to prevent ESD damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSC015NE2LS5I Overview

Use the download button to access the BSC015NE2LS5I schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC01, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSC015NE2LS5I

Showing 0 results