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BSC019N04LS - Infineon

Description: MOSFET TRENCH <= 40V

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BSC019N04LS - Infineon - PCB symbol
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PCB Footprints
BSC019N04LS - Infineon PCB footprint - Other - Other - BSC019N04LS-1
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3D Models
BSC019N04LS - Infineon - 3D model - Other - BSC019N04LS-1
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BSC019N04LS Details

  • Manufacturer Part Number:

    BSC019N04LS

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    27 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC019N04LS Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC019N04LS is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to consider the thermal resistance and power dissipation of the device.
  • The recommended PCB layout for the BSC019N04LS involves using a multi-layer board with a solid ground plane, and placing the device close to the power source to minimize loop inductance.
  • To protect the BSC019N04LS from ESD, it is recommended to follow proper handling and storage procedures, and to use ESD protection devices such as TVS diodes or ESD suppressors.
  • The recommended gate drive circuit for the BSC019N04LS involves using a dedicated gate driver IC, such as the Infineon 1EDC or 2EDC family, to provide a high-current, low-impedance drive signal.

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BSC019N04LS Overview

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