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BSC028N06LS3GATMA1 - Infineon

Description: MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3

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BSC028N06LS3GATMA1 - Infineon  - 3D model
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BSC028N06LS3GATMA1 Details

  • Manufacturer Part Number:

    BSC028N06LS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    298 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    139 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC028N06LS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC028N06LS3GATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized. Also, consider using a gate driver IC to provide a high current drive capability.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections as close as possible to minimize the gate-source loop inductance.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator to detect excessive current and shut down the circuit if necessary.
  • Use a heat sink with a thermal interface material (TIM) to ensure good thermal contact. Ensure good airflow around the heat sink, and consider using a fan to enhance cooling. Also, consider using a thermal pad or thermal tape to improve heat transfer.

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BSC028N06LS3GATMA1 Overview

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