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BSC028N06NSSCATMA1 - Infineon

Description: N-Channel 60V 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-7

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BSC028N06NSSCATMA1 - Infineon PCB footprint - Other - Other - BSC028N06NSSCATMA1-1
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BSC028N06NSSCATMA1 - Infineon  - 3D model - Other - BSC028N06NSSCATMA1-1
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BSC028N06NSSCATMA1 Details

  • Manufacturer Part Number:

    BSC028N06NSSCATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2020-06-04

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    137 A

  • Drain-source On Resistance-Max:

    0.0028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    56 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    548 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    54 ns

  • Turn-on Time-Max (ton):

    79 ns

BSC028N06NSSCATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC028N06NSSCATMA1 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the recommended operating range.
  • A good PCB layout should ensure minimal thermal resistance, use a large copper area for heat dissipation, and keep the MOSFET away from heat sources. A thermal pad or heat sink may be necessary for high-power applications.
  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding a current sense resistor and overcurrent protection circuit to prevent excessive current.
  • The BSC028N06NSSCATMA1 has an ESD rating of 2kV (Human Body Model) and 150V (Machine Model). Handle the device with ESD-protective equipment and follow proper ESD handling procedures.

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