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BSC030N08NS5ATMA1 - Infineon

Description: N-Channel 80 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7

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BSC030N08NS5ATMA1 Details

  • Manufacturer Part Number:

    BSC030N08NS5ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC030N08NS5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC030N08NS5ATMA1 is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value for the BSC030N08NS5ATMA1 is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the BSC030N08NS5ATMA1 is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

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BSC030N08NS5ATMA1 Overview

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