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BSC030P03NS3G - Infineon

Description: Infineon BSC030P03NS3G P-channel MOSFET Transistor, -100 A, -30 V, 8-Pin TDSON

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PCB Footprints
BSC030P03NS3G - Infineon PCB footprint - Other - Other - PG-TDSON-8
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3D Models
BSC030P03NS3G - Infineon  - 3D model - Other - PG-TDSON-8
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BSC030P03NS3G Details

  • Manufacturer Part Number:

    BSC030P03NS3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    345 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    25.4 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    520 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    197 ns

  • Turn-on Time-Max (ton):

    199 ns

BSC030P03NS3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC030P03NS3G is -40°C to 150°C.
  • The recommended PCB layout for the BSC030P03NS3G involves using a thermal pad on the bottom of the package, and connecting it to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the risk of overheating the device.
  • The maximum current rating for the BSC030P03NS3G is 30A, but this can be derated based on the operating temperature and other factors.
  • To protect the BSC030P03NS3G from ESD, handle the device in an ESD-protected environment, use ESD-protective packaging, and ensure that all personnel handling the device are grounded.

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BSC030P03NS3G Overview

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Part Image BSC030P03NS3GXT Infineon Technologies AG

Power Field-Effect Transistor, 25.4A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET