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BSC032N04LSATMA1 - Infineon

Description: MOSFET N-CH 40V 21A/98A TDSON

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BSC032N04LSATMA1 - Infineon  - 3D model
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BSC032N04LSATMA1 Details

  • Manufacturer Part Number:

    BSC032N04LSATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    392 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC032N04LSATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC032N04LSATMA1 is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure the device is operated within the recommended operating conditions.
  • For optimal thermal performance, use a multi-layer PCB with a thermal via structure, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet.
  • To prevent ESD damage, handle the device with ESD-protective equipment, and follow proper ESD handling procedures. The device has built-in ESD protection, but additional external protection may be necessary depending on the application.
  • Follow the recommended soldering conditions specified in the datasheet, including temperature, time, and soldering technique, to ensure reliable assembly and minimize the risk of damage.

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BSC032N04LSATMA1 Overview

Use the download button to access the BSC032N04LSATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC03, or try a keyword search, such as Power Field-Effect Transistors

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