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BSC035N04LSG - Infineon

Description: Infineon BSC035N04LSG N-channel MOSFET Transistor, 100 A, 40 V, 8-Pin TDSON

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BSC035N04LSG - Infineon PCB footprint - Other - Other - PG-TDSON-8
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BSC035N04LSG - Infineon  - 3D model - Other - PG-TDSON-8
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BSC035N04LSG Details

  • Manufacturer Part Number:

    BSC035N04LSG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    GREEN, PLASTIC, TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC035N04LSG Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC035N04LSG is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation.
  • Proper cooling of the BSC035N04LSG can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and thermal dissipation.
  • The recommended gate drive voltage for the BSC035N04LSG is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
  • Yes, the BSC035N04LSG is suitable for high-frequency switching applications up to 100 kHz. However, the user should ensure that the device is properly cooled, and the PCB design is optimized for high-frequency operation to minimize parasitic inductances and capacitances.
  • The BSC035N04LSG can be protected from overvoltage and overcurrent by using a voltage clamp or a TVS diode, and a current sense resistor or a fuse. Additionally, the user should ensure that the device is operated within its safe operating area (SOA) to prevent damage from excessive voltage and current.

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Power Field-Effect Transistor, 21A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET