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BSC039N06NS - Infineon

Description: Infineon BSC039N06NS N-channel MOSFET Transistor, 100 A, 60 V, 8-Pin TDSON

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BSC039N06NS - Infineon PCB footprint - Other - Other - BSC039N06NS-3
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BSC039N06NS - Infineon  - 3D model - Other - BSC039N06NS-3
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BSC039N06NS Details

  • Manufacturer Part Number:

    BSC039N06NS

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    44 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC039N06NS Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC039N06NS is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to consider the device's thermal impedance, junction temperature, and power dissipation.
  • The recommended gate resistor value for the BSC039N06NS is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • To prevent shoot-through current, it is recommended to use a dead-time generator or a dedicated IC for half-bridge control, and to ensure that the gate signals are properly synchronized and delayed.
  • The maximum allowable voltage transient for the BSC039N06NS is specified as 40 V for a duration of 100 ns, but it is recommended to follow the guidelines provided by Infineon for voltage transient protection.

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