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BSC0504NSIATMA1 - Infineon

Description: Infineon BSC0504NSIATMA1 N-channel MOSFET, 72 A, 30 V OptiMOS 5, 8-Pin SuperSO

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BSC0504NSIATMA1 - Infineon - PCB symbol
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PCB Footprints
BSC0504NSIATMA1 - Infineon PCB footprint - Other - Other - PG- TDSON-8-6
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BSC0504NSIATMA1 - Infineon - 3D model - Other - PG- TDSON-8-6
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BSC0504NSIATMA1 Details

  • Manufacturer Part Number:

    BSC0504NSIATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    7 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    288 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC0504NSIATMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Use a shielded cable and connector, and ensure the device is placed at least 10mm away from other components to minimize electromagnetic interference. Follow Infineon's EMC guidelines for more information.
  • The maximum allowed voltage on the input pins is 35V, but it's recommended to keep it below 30V to ensure reliable operation and prevent damage to the device.
  • Check the input voltage, ensure the enable pin is properly configured, and verify the device is not in a fault state. Consult the datasheet and application notes for troubleshooting guidelines.
  • The device is rated for operation up to 150°C, but derating may be necessary for high-temperature applications. Consult the datasheet and thermal management guidelines for more information.

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BSC0504NSIATMA1 Overview

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Part Image BSC0504NSI Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET