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BSC066N06NS - Infineon

Description: MOSFET TRENCH 40<-<100V

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BSC066N06NS - Infineon PCB footprint - Other - Other - BSC066N06NS-2
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BSC066N06NS - Infineon  - 3D model - Other - BSC066N06NS-2
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BSC066N06NS Details

  • Manufacturer Part Number:

    BSC066N06NS

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    21 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    256 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC066N06NS Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC066N06NS is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
  • The maximum current rating of the BSC066N06NS is 66A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the BSC066N06NS from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended gate drive voltage for the BSC066N06NS is between 10V and 15V, with a maximum gate-source voltage of ±20V.

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