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BSC070N10LS5ATMA1 - Infineon

Description: OptiMOSTM5Power-Transistor,100V

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BSC070N10LS5ATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-5
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BSC070N10LS5ATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-5
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BSC070N10LS5ATMA1 Details

  • Manufacturer Part Number:

    BSC070N10LS5ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    79 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    318 A

  • Reference Standard:

    IEC-61249-2-21; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC070N10LS5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC070N10LS5ATMA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it may need to be adjusted based on the specific design requirements.
  • Yes, the BSC070N10LS5ATMA1 is suitable for high-frequency switching applications up to several hundred kHz. However, the designer should ensure that the gate drive circuit is capable of providing a fast switching time and that the layout is optimized to minimize parasitic inductances.
  • To protect the MOSFET from overvoltage and overcurrent, use a suitable voltage clamp or transient voltage suppressor (TVS) to limit the voltage across the MOSFET, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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BSC070N10LS5ATMA1 Overview

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