Part Image

BSC070N10NS3G - Infineon

Description: Infineon BSC070N10NS3G N-channel MOSFET Transistor, 100 A, 100 V, 8-Pin TDSON

Download BSC070N10NS3G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSC070N10NS3G - Infineon PCB footprint - Other - Other - BSC070N10NS3G-1
click to zoom
3D Models
BSC070N10NS3G - Infineon  - 3D model - Other - BSC070N10NS3G-1
click to zoom

BSC070N10NS3G Details

  • Manufacturer Part Number:

    BSC070N10NS3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    92 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    21 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    114 W

  • Pulsed Drain Current-Max (IDM):

    368 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC070N10NS3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC070N10NS3G is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The maximum current rating for the BSC070N10NS3G is 70A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
  • Yes, the BSC070N10NS3G is suitable for high-frequency switching applications, but it's crucial to consider the device's switching characteristics, such as the rise and fall times, and ensure proper layout and design to minimize parasitic inductances.
  • To protect the BSC070N10NS3G from ESD, it's essential to follow proper handling and storage procedures, such as using anti-static packaging, wrist straps, and mats, and ensuring that the device is properly grounded during assembly and testing.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSC070N10NS3G Overview

Use the download button to access the BSC070N10NS3G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC07, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSC070N10NS3G

Showing 0 results